Datasheet4U Logo Datasheet4U.com

PB5G8JW

Dual N-Channel Enhancement Mode Field Effect Transistor

PB5G8JW Features

* Pb

* Free, Halogen Free and RoHS compliant.

* Low RDS(on) to Minimize Conduction Losses.

* Ohmic Region Good RDS(on) Ratio.

* Optimized Gate Charge to Minimize Switching Losses.

* Products Integrated ESD diode with ESD Protected up to 2KV. Application

PB5G8JW Datasheet (230.15 KB)

Preview of PB5G8JW PDF

Datasheet Details

Part number:

PB5G8JW

Manufacturer:

NIKO-SEM

File Size:

230.15 KB

Description:

Dual n-channel enhancement mode field effect transistor.
NIKO-SEM Dual N-Channel Enhancement Mode Field Effect Transistor PB5G8JW PDFN 2x2S Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID.

📁 Related Datasheet

PB5G8JW MOSFET (UNIKC)

PB5G2JU Dual N-Channel MOSFET (UNIKC)

PB50 POWER BOOSTER AMPLIFIER (ETC)

PB50005 Bridge Rectifier (Yangzhou Yangjie)

PB5001 Bridge Rectifier (Yangzhou Yangjie)

PB5002 Bridge Rectifier (Yangzhou Yangjie)

PB5004 Bridge Rectifier (Yangzhou Yangjie)

PB5006 Bridge Rectifiers (Vishay)

PB5006 Bridge Rectifier (Yangzhou Yangjie)

PB5006L Low VF Bridge Rectifier (Yangzhou Yangjie)

TAGS

PB5G8JW Dual N-Channel Enhancement Mode Field Effect Transistor NIKO-SEM

Image Gallery

PB5G8JW Datasheet Preview Page 2 PB5G8JW Datasheet Preview Page 3

PB5G8JW Distributor