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PB5G8JW, PB5G8JW-NIKO Dual N-Channel Enhancement Mode Field Effect Transistor

PB5G8JW Description

NIKO-SEM Dual N-Channel Enhancement Mode Field Effect Transistor PB5G8JW PDFN 2x2S Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID.

PB5G8JW Features

* Pb
* Free, Halogen Free and RoHS compliant.
* Low RDS(on) to Minimize Conduction Losses.
* Ohmic Region Good RDS(on) Ratio.
* Optimized Gate Charge to Minimize Switching Losses.

PB5G8JW Applications

* Protection Circuits Applications.
* Logic/Load Switch Circuits Applications. 100% RG Test , 100% UIL Test 1 : S1. 2 : G1. 3 : D2. 4 : S2. 5 : G2. 6 : D1. ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Drain-Source Voltage Gate

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: PB5G8JW, PB5G8JW-NIKO. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
PB5G8JW, PB5G8JW-NIKO
Manufacturer
NIKO-SEM
File Size
230.15 KB
Datasheet
PB5G8JW-NIKO-SEM.pdf
Description
Dual N-Channel Enhancement Mode Field Effect Transistor
Note
This datasheet PDF includes multiple part numbers: PB5G8JW, PB5G8JW-NIKO.
Please refer to the document for exact specifications by model.

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📌 All Tags

Dual N-Channel Enhancement Mode Field Effect Transistor NIKO-SEM
NIKO-SEM PB5G8JW-like datasheet