PB5G8JW Features
* Pb
* Free, Halogen Free and RoHS compliant.
* Low RDS(on) to Minimize Conduction Losses.
* Ohmic Region Good RDS(on) Ratio.
* Optimized Gate Charge to Minimize Switching Losses.
* Products Integrated ESD diode with ESD Protected up to 2KV. Application
Datasheet Details
PB5G8JW, PB5G8JW-NIKO
NIKO-SEM
230.15 KB
Dual n-channel enhancement mode field effect transistor.
This datasheet PDF includes multiple part numbers: PB5G8JW, PB5G8JW-NIKO.
Please refer to the document for exact specifications by model.
PB5G8JW Distributor
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