Part number:
PB5G8JW
Manufacturer:
NIKO-SEM
File Size:
230.15 KB
Description:
Dual n-channel enhancement mode field effect transistor.
PB5G8JW Features
* Pb
* Free, Halogen Free and RoHS compliant.
* Low RDS(on) to Minimize Conduction Losses.
* Ohmic Region Good RDS(on) Ratio.
* Optimized Gate Charge to Minimize Switching Losses.
* Products Integrated ESD diode with ESD Protected up to 2KV. Application
Datasheet Details
PB5G8JW
NIKO-SEM
230.15 KB
Dual n-channel enhancement mode field effect transistor.
📁 Related Datasheet
PB5G8JW MOSFET (UNIKC)
PB5G2JU Dual N-Channel MOSFET (UNIKC)
PB50 POWER BOOSTER AMPLIFIER (ETC)
PB50005 Bridge Rectifier (Yangzhou Yangjie)
PB5001 Bridge Rectifier (Yangzhou Yangjie)
PB5002 Bridge Rectifier (Yangzhou Yangjie)
PB5004 Bridge Rectifier (Yangzhou Yangjie)
PB5006 Bridge Rectifiers (Vishay)
PB5006 Bridge Rectifier (Yangzhou Yangjie)
PB5006L Low VF Bridge Rectifier (Yangzhou Yangjie)
PB5G8JW Distributor