PB5G2JU Datasheet - UNIKC

PB5G2JU Dual N-Channel MOSFET

PB5G2JU Dual N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 20V 9.5mΩ @VGS = 4.5V 12A TDFN 2X3-6 1,2:S1 3:G1 4:G2 5,6:S2 7:D1/D2 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ±10 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA= 70 °C ID 12 9.4 IDM 42 Avalanche Current IAS 23 Avalanche Energy3 EAS 26 Power Dissipation TA= .

PB5G2JU Datasheet (762.39 KB)