PB555BA Datasheet - UNIKC

PB555BA P-Channel MOSFET

PB555BA P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -30V 25mΩ @VGS = -10V ID -8A PDFN 2X2S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS -30 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA= 70 °C ID IDM -8 -6.4 30 Power Dissipation3 TA= 25 °C TA= 70°C PD 2.7 1.7 Operating Junction & Storage Temperature Range Tj, Tstg -55 to 150.

PB555BA Datasheet (799.17 KB)