PB560DZ Datasheet - UNIKC

PB560DZ MOSFET

PB560DZ Dual N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 20V 26mΩ @VGS = 4.5V ID 7.8A PDFN 2X3S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ±8 Continuous Drain Current Pulsed Drain Current1 TA= 25 °C TA = 70 °C ID IDM 7.8 6.2 40 Avalanche Current IAS 10 Avalanche Energy3 EAS 4.9 Power Dissipation TA = 25 °C TA= 70 °C PD 2.4 1.5 Junction &.

PB560DZ-UNIKC.pdf