PB5G8JW Datasheet - UNIKC

PB5G8JW MOSFET

PB5G8JW Dual N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 20V 35mΩ @VGS = 4.5V ID 5A PDFN 2X2S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ±8 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA= 70 °C ID IDM 5 3.9 20 Power Dissipation TA = 25 °C TA = 70 °C PD 1.4 0.9 Operating Junction & Storage Temperature Range TJ, Tstg -55 to 150.

PB5G8JW Datasheet (768.26 KB)