NSM2016 Datasheet - NOVOSENSE

NSM2016 Hall-Effect-Based Current Sensor IC

15 6.1. OVERVIEW 15 6.2. NSM2016 F VERSION(FIXED OUTPUT) .

NSM2016 Hall-Effect-Based Current Sensor IC with CommonMode Field Rejection and Overcurrent protection Datasheet (CN) 1.0 Product Overview NSM2016 is an integrated path current sensor with a very low on-resistance of 1.2mΩ, reducing heat loss on the chip. NOVOSENSE innovative isolation technology and signal conditioning design can meet high isolation levels while sensing the current flowing through the internal Busbar. A differential Hall pair is used internally, so it has a strong immunity to .

NSM2016 Features

* High bandwidth and fast response time

* 380kHz bandwidth

* 1.5us response time

* High-precision current measurement

* Differential hall sets can immune stray field

* High isolation level that meets UL standards

* Withstand isolation voltage (VISO): 3000Vrms

* Maximu

NSM2016-NOVOSENSE.pdf

NSM2016 Datasheet Preview — Preview of NSM2016 PDF

Datasheet Details

Part number:

NSM2016

Manufacturer:

NOVOSENSE

File Size:

3.55 MB

Description:

Hall-effect-based current sensor ic.

📁 Related Datasheet

NSM2012 Hall-Effect-Based Current Sensor IC (NOVOSENSE)

NSM2015 Hall-Effect-Based Current Sensor IC (NOVOSENSE)

NSM21156DW6T1G Dual Complementary Transistors (ON Semiconductor)

NSM21356DW6T1G Dual Complementary Transistors (ON Semiconductor)

NSM2416 Alphanumeric Display (National Semiconductor)

NSM-1416 Display (National Semiconductor)

NSM-1416 (NSM1416 / NSM2416) Alphanumeric Display (National Semiconductor)

NSM-2416 (NSM1416 / NSM2416) Alphanumeric Display (National Semiconductor)

TAGS

NSM2016 NSM2016 Hall-Effect-Based Current Sensor NOVOSENSE

NSM2016 Distributor