NSM2015 - Hall-Effect-Based Current Sensor IC

NOVOSENSE

Key Features

High bandwidth and fast response time.
320kHz bandwidth.
1.5us response time.
High-precision current measurement.
Differential Hall sets can immune stray field.
High isolation level that meets UL standards.
Working Voltage for Basic Isolation (VWVBI): 1550Vpk / 1097Vrms.
Withstand isolation voltage (VISO): 5000Vrms.
Maximum surge isolation withstand voltage (VIOSM): 10kV.
Maximum surge current (Isurge): 13kA.
CMTI > 100V/ns.
CTI（I）.

NSM2015 hall-effect-based current sensor ic by NOVOSENSE - Datasheet Preview

Datasheet Details

Part number	NSM2015
Manufacturer	NOVOSENSE
File Size	1.93 MB
Description	Hall-Effect-Based Current Sensor IC
Datasheet	NSM2015 Datasheet

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Other Datasheets by NOVOSENSE

Part Number	Description
NSM2015-Q1	Hall-Effect-Based Current Sensor IC
NSM2011	Hall-Effect-Based Current Sensor IC
NSM2012	Hall-Effect-Based Current Sensor IC
NSM2016	Hall-Effect-Based Current Sensor IC
NSM2019	Hall-Effect-Based Current Sensor IC

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NSM2015 Hall-Effect-Based Current Sensor IC with Common- Mode Field Rejection and Overcurrent protection Datasheet (EN) 1.0 Product Overview NSM2015 is an integrated path current sensor with a very low on-resistance of 0.85mΩ, reducing heat loss on the chip. NOVOSENSE innovative isolation technology and signal conditioning design can meet high isolation levels while sensing the current flowing through the internal Busbar. A differential Hall pair is used internally, so it has a strong immunity to external stray magnetic fields. NSM2015 senses the magnetic field generated by the Busbar current flowing under the chip to indirectly detect the current.