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NSM2015 - Hall-Effect-Based Current Sensor IC

Datasheet Summary

Features

  • High bandwidth and fast response time.
  • 320kHz bandwidth.
  • 1.5us response time.
  • High-precision current measurement.
  • Differential Hall sets can immune stray field.
  • High isolation level that meets UL standards.
  • Working Voltage for Basic Isolation (VWVBI): 1550Vpk / 1097Vrms.
  • Withstand isolation voltage (VISO): 5000Vrms.
  • Maximum surge isolation withstand voltage (VIOSM): 10kV.
  • Maximum surge current (Isurge): 13kA.
  • CMTI > 100V/ns.
  • CTI（I）.

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Datasheet preview – NSM2015

Datasheet Details

Part number NSM2015
Manufacturer NOVOSENSE
File Size 1.93 MB
Description Hall-Effect-Based Current Sensor IC
Datasheet download datasheet NSM2015 Datasheet
Additional preview pages of the NSM2015 datasheet.

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Full PDF Text Transcription

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NSM2015 Hall-Effect-Based Current Sensor IC with Common- Mode Field Rejection and Overcurrent protection Datasheet (EN) 1.0 Product Overview NSM2015 is an integrated path current sensor with a very low on-resistance of 0.85mΩ, reducing heat loss on the chip. NOVOSENSE innovative isolation technology and signal conditioning design can meet high isolation levels while sensing the current flowing through the internal Busbar. A differential Hall pair is used internally, so it has a strong immunity to external stray magnetic fields. NSM2015 senses the magnetic field generated by the Busbar current flowing under the chip to indirectly detect the current.
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