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NSM2012 - Hall-Effect-Based Current Sensor IC

Datasheet Summary

Features

  • High bandwidth and fast response time.
  • 400kHz bandwidth.
  • 1.5us response time.
  • High-precision current measurement.
  • Differential Hall sets can immune stray field.
  • High isolation level that meets UL standards.
  • Withstand isolation voltage (VISO): 3000Vrms.
  • Maximum surge isolation withstand voltage (VIOSM): 6kV.
  • CMTI > 100V/ns.
  • CTI(I).
  • Creepage distance/Clearance distance: 4mm.

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Datasheet preview – NSM2012

Datasheet Details

Part number NSM2012
Manufacturer NOVOSENSE
File Size 1.26 MB
Description Hall-Effect-Based Current Sensor IC
Datasheet download datasheet NSM2012 Datasheet
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Full PDF Text Transcription

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NSM2012 High-Accuracy, Hall-Effect-Based Current Sensor IC with Common-Mode Field Rejection in 3kV Isolation Datasheet (EN) 1.2 Product Overview NSM2012 is an integrated path current sensor with a very low on-resistance of 1.2mΩ, reducing heat loss on the chip. NOVOSENSE innovative isolation technology and signal conditioning design can meet high isolation levels while sensing the current flowing through the internal Busbar. A differential Hall pair is used internally, so it has a strong immunity to external stray magnetic fields. NSM2012 supports both a ratiometric output and a fixed output mode. The fixed mode enables customers to use ADC differential sampling of VREF and VOUT voltages to reduce external common-mode (such as temperature,etc).
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