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NSM2011 Datasheet

Manufacturer: NOVOSENSE
NSM2011 datasheet preview

Datasheet Details

Part number NSM2011
Datasheet NSM2011-NOVOSENSE.pdf
File Size 1.82 MB
Manufacturer NOVOSENSE
Description Hall-Effect-Based Current Sensor IC
NSM2011 page 2 NSM2011 page 3

NSM2011 Overview

NSM2011 High-Accuracy, Hall-Effect-Based Current Sensor IC with mon-Mode Field Rejection in 5kV High-Isolation Datasheet (EN) 1.3 Product Overview NSM2011 is an integrated path current sensor with a very low on-resistance of 0.85mΩ, reducing heat loss on the chip. NOVOSENSE innovative isolation technology and signal conditioning design can meet high isolation levels while sensing the current flowing through the...

NSM2011 Key Features

  • High bandwidth and fast response time
  • 240kHz bandwidth
  • 2.2us response time
  • High-precision current measurement
  • Differential Hall sets can immune stray field
  • High isolation level that meets UL standards
  • Maximum repeated isolation withstand voltage (VIROM)
  • Maximum working isolation withstand voltage (VIOWM): 1097Vrms
  • Withstand isolation voltage (VISO): 5000Vrms
  • Maximum surge isolation withstand voltage (VIOSM)
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NSM2011 Distributor

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