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NSM2011 - Hall-Effect-Based Current Sensor IC

Features

  • High bandwidth and fast response time.
  • 240kHz bandwidth.
  • 2.2us response time.
  • High-precision current measurement.
  • Differential Hall sets can immune stray field.
  • High isolation level that meets UL standards.
  • Maximum repeated isolation withstand voltage (VIROM): 1550Vpk.
  • Maximum working isolation withstand voltage (VIOWM): 1097Vrms.
  • Withstand isolation voltage (VISO): 5000Vrms.
  • Maximum surge isolation withstand voltage (VIOSM): 10kV.
  • Maximum.

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Datasheet preview – NSM2011

Datasheet Details

Part number NSM2011
Manufacturer NOVOSENSE
File Size 1.82 MB
Description Hall-Effect-Based Current Sensor IC
Datasheet download datasheet NSM2011 Datasheet
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Full PDF Text Transcription

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NSM2011 High-Accuracy, Hall-Effect-Based Current Sensor IC with Common-Mode Field Rejection in 5kV High-Isolation Datasheet (EN) 1.3 Product Overview NSM2011 is an integrated path current sensor with a very low on-resistance of 0.85mΩ, reducing heat loss on the chip. NOVOSENSE innovative isolation technology and signal conditioning design can meet high isolation levels while sensing the current flowing through the internal Busbar. A differential Hall pair is used internally, so it has a strong immunity to external stray magnetic fields. NSM2011 senses the magnetic field generated by the Busbar current flowing under the chip to indirectly detect the current.
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