NSM2011 Datasheet | NOVOSENSE

Overview NSM2011 is an integrated path current sensor with a very low on-resistance of 0.85mΩ, reducing heat loss on the chip. NOVOSENSE innovative isolation technology and signal conditioning design can meet high isolation levels while sensing the current flowing through the internal Busbar. A differential Hall pair is used internally, so it has a strong immunity to external stray magnetic fields. NSM2011 senses the magnetic field generated by the Busbar current flowing under the chip to indirectly detect the current. pared with the current sampling method of the Shunt+ isolated op amp, NSM2011 eliminates the need for the primary side power supply and has a simple and convenient layout. At the same time, it has extremely high isolation withstand voltage and Lifetime stability. In high-side current monitoring applications, NSM2011 can reach a working voltage of 1550Vpk, and it can withstand 10k V surge voltage and 13k A surge current without adding any protection devices. Due to NSM2011 internal accurate temperature pensation algorithm and factory accuracy calibration, this current sensor can maintain good accuracy in the full temperature working range, and the customer does not need to do secondary programming or calibration. Support 3.3V/5V power supply (different version) Key Features - High bandwidth and fast response time - 240k Hz bandwidth - 2.2us response time - High-precision current measurement - Differential Hall sets can immune stray field - High isolation level that meets UL standards - Maximum repeated isolation withstand voltage (VIROM): 1550Vpk - Maximum working isolation withstand voltage (VIOWM): 1097Vrms - Withstand isolation voltage (VISO): 5000Vrms - Maximum surge isolation withstand voltage (VIOSM): 10k V - Maximum surge current (Isurge): 13k A - CMTI > 100V/ns - CTI（I） - Creepage distance/Clearance distance: 8mm - An external capacitor on the Filter pin can reduce noise (sacrificing bandwidth) - NOVOSENSE innovative ‘Spin Current’ technology...