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NSM2015-Q1 - Hall-Effect-Based Current Sensor IC

Key Features

  • High bandwidth and fast response time.
  • 320kHz bandwidth.
  • 1.5us response time.
  • High-precision current measurement.
  • Differential Hall sets can immune stray field.
  • High isolation level that meets UL standards.
  • Working Voltage for Basic Isolation (VWVBI): 1550Vpk / 1097Vrms.
  • Withstand isolation voltage (VISO): 5000Vrms.
  • Maximum surge isolation withstand voltage (VIOSM): 10kV.
  • Maximum surge current (Isurge): 13kA.
  • CMTI > 100V/ns.
  • CTI (I).

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Datasheet Details

Part number NSM2015-Q1
Manufacturer NOVOSENSE
File Size 1.82 MB
Description Hall-Effect-Based Current Sensor IC
Datasheet download datasheet NSM2015-Q1 Datasheet

Full PDF Text Transcription for NSM2015-Q1 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for NSM2015-Q1. For precise diagrams, and layout, please refer to the original PDF.

NSM2015-Q1 Hall-Effect-Based Current Sensor IC with Common- Mode Field Rejection and Overcurrent protection Datasheet (EN) 1.6 Product Overview NSM2015-Q1 is an integrate...

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tection Datasheet (EN) 1.6 Product Overview NSM2015-Q1 is an integrated path current sensor with a very low on-resistance of 0.85mΩ, reducing heat loss on the chip. NOVOSENSE innovative isolation technology and signal conditioning design can meet high isolation levels while sensing the current flowing through the internal Busbar. A differential Hall pair is used internally, so it has a strong immunity to external stray magnetic fields. NSM2015-Q1 senses the magnetic field generated by the Busbar current flowing under the chip to indirectly detect the current.

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