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NSM2015-Q1 Datasheet

Manufacturer: NOVOSENSE
NSM2015-Q1 datasheet preview

Datasheet Details

Part number NSM2015-Q1
Datasheet NSM2015-Q1-NOVOSENSE.pdf
File Size 1.82 MB
Manufacturer NOVOSENSE
Description Hall-Effect-Based Current Sensor IC
NSM2015-Q1 page 2 NSM2015-Q1 page 3

NSM2015-Q1 Overview

NSM2015-Q1 Hall-Effect-Based Current Sensor IC with mon- Mode Field Rejection and Overcurrent protection Datasheet (EN) 1.6 Product Overview NSM2015-Q1 is an integrated path current sensor with a very low on-resistance of 0.85mΩ, reducing heat loss on the chip. NOVOSENSE innovative isolation technology and signal conditioning design can meet high isolation levels while sensing the current flowing through the...

NSM2015-Q1 Key Features

  • High bandwidth and fast response time
  • 320kHz bandwidth
  • 1.5us response time
  • High-precision current measurement
  • Differential Hall sets can immune stray field
  • High isolation level that meets UL standards
  • Working Voltage for Basic Isolation (VWVBI): 1550Vpk /
  • Withstand isolation voltage (VISO): 5000Vrms
  • Maximum surge isolation withstand voltage (VIOSM)
  • Maximum surge current (Isurge): 13kA
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NSM2015-Q1 Distributor

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