2N5301 Datasheet, Transistor, NTE

2N5301 Features

• Transistor D High Collector
• Emitter Sustaining Voltage: VCEO(sus) = 40V (Min) @ IC = 200mA (2N5301) VCEO(sus) = 80V (Min) @ IC = 200mA (2N5303) D Low Collector
• Emitter Saturation

PDF File Details

Part number:

2N5301

Manufacturer:

NTE

File Size:

68.36kb

Download:

📄 Datasheet

Description:

Silicon npn transistor. The 2N5301 and 2N5303 are silicon NPN transistors in a TO

3 type case designed for use in power amplifier and switching circ

2N5301 Application

• Applications . Features: D High Collector
• Emitter Sustaining Voltage: VCEO(sus) = 40V (Min) @ IC = 200mA (2N5301) VCEO(sus) = 80V (Min) @ IC

TAGS

2N5301

NTE

📁 Related Datasheet

2N5301 - POWER TRANSISTORS (ON Semiconductor)
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N5301/D High-Power NPN Silicon Transistors . . . for use in power amplifier and switc.

2N5301 - Bipolar NPN Device (Seme LAB)
2N5301 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) Bipolar NPN .

2N5301 - Silicon NPN Power Transistors (Inchange Semiconductor)
Inchange Semiconductor Silicon NPN Power Transistors Product Specification 2N5301 2N5302 2N5303 DESCRIPTION With TO-3 package Complement to type 2N4.

2N5301 - NPN SILICON POWER TRANSISTOR (SSDI)
.

2N5301 - Bipolar Transistor (Multicomp)
Bipolar Transistor Features: •  High Collector Emitter Sustaining Voltage :VCEO = 80V @ IC = 200mA •  Low Collector Emitter saturation Voltage VCE(sa.

2N5301 - N-CHANNEL JFET (Micross)
2N5301 N-CHANNEL JFET Linear Systems replaces discontinued LF5301 and PF5301 The 2N5301 is a very High Input Impedance N-Channel JFET amplifier The 2.

2N5301 - SILICON NPN Transistor (Toshiba)
: SILICON NPN TRIPLE DIFFUSED TYPE 3 2N5301 HIGH POWER SWITCHING, AMPLIFIER, DC-DC CONVERTER, INVERTER AND REGULATOR APPLICATIONS Unit in mm FEATU.

2N5302 - POWER TRANSISTORS (ON Semiconductor)
2N5302 High−Power NPN Silicon Transistor High−power NPN silicon transistors are for use in power amplifier and switching circuits applications. Featur.

2N5302 - NPN SILICON POWER TRANSISTOR (SSDI)
.

2N5302 - Bipolar NPN Device (Seme LAB)
2N5302 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) Bipolar NPN .