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2N5886

Silicon Power Transistor

2N5886 Features

* D Low Collector

* Emitter Saturation Voltage: VCE(sat) = 1V (Max) at IC = 15A D Excellent DC Current Gain: hFE = 20

* 100 @ IC = 10A Absolute Maximum Ratings: Collector

* Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

2N5886 Datasheet (60.80 KB)

Preview of 2N5886 PDF

Datasheet Details

Part number:

2N5886

Manufacturer:

NTE

File Size:

60.80 KB

Description:

Silicon power transistor.

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TAGS

2N5886 Silicon Power Transistor NTE

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