2N5886 - Silicon Power Transistor

Product Overview

NTE

2N5886 Silicon Power Transistor by NTE - Datasheet Preview — Datasheet preview – 2N5886

Datasheet Details

Part number	2N5886
Manufacturer	NTE
File Size	60.80 KB
Description	Silicon Power Transistor
Datasheet	2N5886 Datasheet
Note	This datasheet PDF includes multiple part numbers: 2N5886, 2N5884. Please refer to the document for exact specifications by model.
Additional preview pages of the 2N5886 datasheet.

Product details

Description

The 2N5884 (PNP) and 2N5886 (NPN) are silicon complementary transistors designed for use in general purpose power amplifier and switching applications.

Features

D Low Collector.
Emitter Saturation Voltage: VCE(sat) = 1V (Max) at IC = 15A D Excellent DC Current Gain: hFE = 20.
100 @ IC = 10A Absolute Maximum Ratings: Collector.
Emitter Voltage, VCEO.
. . . . 80V Collector.
Base Voltage, VCBO.
80V Emitter.
Base Voltage, VEBO.

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Published: Oct 25, 2016 |