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2N5882 - Silicon NPN Power Transistor

Datasheet Summary

Description

The 2N5882 is a silicon NPN transistor in a TO

3 type package designed for use in general purpose power amplifier and switching applications.

Features

  • D Low Collector.
  • Emitter Saturation Voltage: VCE(sat) = 1V (Max) at IC = 7A D Excellent DC Current Gain: hFE = 20.
  • 100 @ IC = 6A Absolute Maximum Ratings: Collector.
  • Emitter Voltage, VCEO.
  • . . . . 80V Collector.
  • Base Voltage, VCBO.
  • 80V Emitter.
  • Base Voltage, VEBO.

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Datasheet Details

Part number 2N5882
Manufacturer NTE
File Size 64.92 KB
Description Silicon NPN Power Transistor
Datasheet download datasheet 2N5882 Datasheet
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Full PDF Text Transcription

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2N5882 Silicon NPN Power Transistor High Power Audio Amplifier TO−3 Type Package Description: The 2N5882 is a silicon NPN transistor in a TO−3 type package designed for use in general purpose power amplifier and switching applications. Features: D Low Collector−Emitter Saturation Voltage: VCE(sat) = 1V (Max) at IC = 7A D Excellent DC Current Gain: hFE = 20 − 100 @ IC = 6A Absolute Maximum Ratings: Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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