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2N5880 - Complementary Power Transistor

Datasheet Summary

Features

  • Low Collector-Emitter Saturation Voltage VCE(sat) = 1.0V (Maximum) at IC = 7.0A.
  • Execellent DC current Gain hFE = 20 - 100 at IC = 6.0A Pin 1. Base 2. Emitter Collector(Case) Maximum Ratings Dimensions Minimum Maximum A 38.75 39.96 B 19.28 22.23 C 7.96 9.28 D 11.18 12.19 E 25.20 26.67 F 0.92 1.09 G 1.38 1.62 H 29.90 30.40 I 16.64 17.30 J 3.88 4.36 K 10.67 11.18 Dimensions : Millimetres Characteristic Symbol Rating Collector-Emitter Volt.

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Datasheet Details

Part number 2N5880
Manufacturer Multicomp
File Size 292.37 KB
Description Complementary Power Transistor
Datasheet download datasheet 2N5880 Datasheet
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Full PDF Text Transcription

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2N5880 & 2N5882 Complementary Power Transistors General-purpose power amplifier and switching applications. Features: • Low Collector-Emitter Saturation Voltage VCE(sat) = 1.0V (Maximum) at IC = 7.0A • Execellent DC current Gain hFE = 20 - 100 at IC = 6.0A Pin 1. Base 2. Emitter Collector(Case) Maximum Ratings Dimensions Minimum Maximum A 38.75 39.96 B 19.28 22.23 C 7.96 9.28 D 11.18 12.19 E 25.20 26.67 F 0.92 1.09 G 1.38 1.62 H 29.90 30.40 I 16.64 17.30 J 3.88 4.36 K 10.67 11.
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