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2N5880

Complementary Power Transistor

2N5880 Features

* Low Collector-Emitter Saturation Voltage VCE(sat) = 1.0V (Maximum) at IC = 7.0A

* Execellent DC current Gain hFE = 20 - 100 at IC = 6.0A Pin 1. Base 2. Emitter Collector(Case) Maximum Ratings Dimensions Minimum Maximum A 38.75 39.96 B 19.28 22.23 C 7.96 9.28 D 11.18

2N5880 Datasheet (292.37 KB)

Preview of 2N5880 PDF

Datasheet Details

Part number:

2N5880

Manufacturer:

Multicomp

File Size:

292.37 KB

Description:

Complementary power transistor.

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TAGS

2N5880 Complementary Power Transistor Multicomp

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