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2N5882 - Silicon NPN Power Transistor

General Description

The 2N5882 is a silicon NPN transistor in a TO

3 type package designed for use in general purpose power amplifier and switching applications.

Key Features

  • D Low Collector.
  • Emitter Saturation Voltage: VCE(sat) = 1V (Max) at IC = 7A D Excellent DC Current Gain: hFE = 20.
  • 100 @ IC = 6A Absolute Maximum Ratings: Collector.
  • Emitter Voltage, VCEO.
  • . . . . 80V Collector.
  • Base Voltage, VCBO.
  • 80V Emitter.
  • Base Voltage, VEBO.

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Datasheet Details

Part number 2N5882
Manufacturer NTE Electronics (defunct)
File Size 64.92 KB
Description Silicon NPN Power Transistor
Datasheet download datasheet 2N5882 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2N5882 Silicon NPN Power Transistor High Power Audio Amplifier TO−3 Type Package Description: The 2N5882 is a silicon NPN transistor in a TO−3 type package designed for use in general purpose power amplifier and switching applications. Features: D Low Collector−Emitter Saturation Voltage: VCE(sat) = 1V (Max) at IC = 7A D Excellent DC Current Gain: hFE = 20 − 100 @ IC = 6A Absolute Maximum Ratings: Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .