2N6287 Datasheet, Transistor, NTE

2N6287 Features

• Transistor D High DC Current Gain @ IC = 10A: hFE = 4000 Typ (NTE252) D Collector
• Emitter Sustaining Voltage: VCEO(sus) = 100V Min D Monolithic Construction with Built
• In Base

PDF File Details

Part number:

2N6287

Manufacturer:

NTE

File Size:

60.05kb

Download:

📄 Datasheet

Description:

Silicon pnp darlington transistor. The 2N6287 is silicon PNP Darlington transistor in a TO3 type case designed for general

purpose amplifier and low

fr

2N6287 Application

• Applications Features: D High DC Current Gain @ IC = 10A: hFE = 4000 Typ (NTE252) D Collector
• Emitter Sustaining Voltage: VCEO(sus) = 100V

TAGS

2N6287

NTE

📁 Related Datasheet

2N6280 - HIGH-POWER NPN SILICON TRANSISTORS (ETC)
2N 6278 thru 2N 6281 (SILICON) HIGH-POWER NPN SILICON TRANSISTORS designed for use in industrial-military power amplifier and switching circuit appli.

2N6280 - Silicon NPN Power Transistor (INCHANGE)
isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : VCEO=140V(Min) ·Minimum Lot-to-Lot variations for robust device .

2N6280 - NPN POWER TRANSISTORS (New Jersey Semi-Conductor)
.

2N6280 - NPN Transistor (SSDI)
40 AMP NPN Sorted by IC, then VCEO Part Number mIaCx (A) 2N5968 2N6033 40 40 mVCaExO (V) 100 120 Ratings based on 25˚C case temperature unless o.

2N6281 - HIGH-POWER NPN SILICON TRANSISTORS (ETC)
2N 6278 thru 2N 6281 (SILICON) HIGH-POWER NPN SILICON TRANSISTORS designed for use in industrial-military power amplifier and switching circuit appli.

2N6281 - Silicon NPN Power Transistor (INCHANGE)
isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : VCEO=150V(Min) ·Minimum Lot-to-Lot variations for robust device .

2N6281 - NPN POWER TRANSISTORS (New Jersey Semi-Conductor)
.

2N6281 - NPN Transistor (SSDI)
40 AMP NPN Sorted by IC, then VCEO Part Number mIaCx (A) 2N5968 2N6033 40 40 mVCaExO (V) 100 120 Ratings based on 25˚C case temperature unless o.

2N6282 - DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS (ON Semiconductor)
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N6282/D Darlington Complementary Silicon Power Transistors . . . designed for general.

2N6282 - NPN Transistor (INCHANGE)
isc Silicon NPN Darlingtion Power Transistor DESCRIPTION ·Built-in Base-Emitter Shunt Resistors ·High DC current gain- hFE = 750 (Min) @ IC = 10 Adc .