2N6609 Datasheet, Transistor, NTE

2N6609 Features

• Transistor D High Safe Operating Area 150W @ 100V D Completely Characterized for Linear Operation D High DC Current Gain and Low Saturation Voltage: hFE = 15 (Min) @ 8A, 4V VCE(sat) = 1.4V (Max)

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Part number:

2N6609

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NTE

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📄 Datasheet

Description:

Silicon pnp transistor. The 2N6609 is a silicon PNP power transistors in a TO

3 type package designed for high power audio, disk head positioners, a

2N6609 Application

• Applications It can also be used in power switching circuits such as relay or solenoid drivers, DC to DC converters or inverters. Features: D High

TAGS

2N6609

NTE

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