Datasheet4U Logo Datasheet4U.com

2N6609 Datasheet - NTE

2N6609 - Silicon PNP Transistor

2N6609 Features

* D High Safe Operating Area 150W @ 100V D Completely Characterized for Linear Operation D High DC Current Gain and Low Saturation Voltage: hFE = 15 (Min) @ 8A, 4V VCE(sat) = 1.4V (Max) @ IC = 8A, IB = 0.8A Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Collector

* Emitter

2N6609-NTE.pdf

Preview of 2N6609 PDF
2N6609 Datasheet Preview Page 2 2N6609 Datasheet Preview Page 3

Datasheet Details

Part number:

2N6609

Manufacturer:

NTE

File Size:

65.14 KB

Description:

Silicon pnp transistor.

📁 Related Datasheet

📌 All Tags