2N6667 Datasheet, Transistors, NTE

2N6667 Features

• Transistors D DC Current Gain: hFE = 3000 (Typ) @ IC = 4A D Collector
• Emitter Sustaining Voltage: VCEO(sus) = 40V (Min)
• 2N6666 = 60V (Min)
• 2N6667 = 80V (Min)

PDF File Details

Part number:

2N6667

Manufacturer:

NTE

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64.42kb

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📄 Datasheet

Description:

Silicon pnp transistors. The 2N6666, 2N6667, and 2N6668 are silicon PNP Darlington power transistors in a TO

220 type package designed for general pu

2N6667 Application

• Applications Features: D DC Current Gain: hFE = 3000 (Typ) @ IC = 4A D Collector
• Emitter Sustaining Voltage: VCEO(sus) = 40V (Min)

TAGS

2N6667

NTE

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