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2N6661 Datasheet - Seme LAB

2N6661 N-CHANNEL ENHANCEMENT MODE POWER MOSFET

N-CHANNEL ENHANCEMENT MODE POWER MOSFET 2N6661 VDSS = 90V , ID = 0.9A, RDS(ON) = 4.0Ω Fast Switching Low Threshold Voltage (Logic Level) Low CISS Integral Source-Drain Body Diode Hermetic Metal TO39 Package High Reliability Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VDS Drain Source Voltage 90V VGS Gate Source Voltage ±20V ID Continuous Drain Current TC.

2N6661_SemeLAB.pdf

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Datasheet Details

Part number:

2N6661

Manufacturer:

Seme LAB

File Size:

75.04 KB

Description:

N-channel enhancement mode power mosfet.

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2N6661 2N6661 N-CHANNEL ENHANCEMENT MODE POWER MOSFET Seme LAB

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