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2N6661 N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Seme LAB

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Description

N-CHANNEL ENHANCEMENT MODE POWER MOSFET 2N6661 * VDSS = 90V , ID = 0.9A, RDS(ON) = 4.0Ω * Fast Switching * Low Threshold Volt.

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Datasheet Specifications

Part number: 2N6661
Manufacturer: Seme LAB
File Size: 75.04 KB
Datasheet: 2N6661_SemeLAB.pdf
Description: N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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2N6661 N-CHANNEL ENHANCEMENT MODE POWER MOSFET Seme LAB

Seme LAB 2N6661-like datasheet