Part number:
IRF350
Manufacturer:
NTE
File Size:
69.66 KB
Description:
N-channel mosfet.
* D Repetitive Avalanche Ratings D Dynamic dv/dt Rating D Simple Drive Requirements D Ease of Paralleling G S Absolute Maximum Ratings: Drain
* Source Voltage (VGS = 0V, ID = 1mA), VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V Gate
* Source Voltage,
IRF350
NTE
69.66 KB
N-channel mosfet.
📁 Related Datasheet
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Data Sheet March 1999 File Number 1826.3
15A, 400V, 0.300 Ohm, N-Channel Power MOSFET
This is an N-Channel enhancement mode silicon gate power.
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REPETITIVE A V ALANCHE AND dv/dt RATED
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Product Summary
Part Number IRF350 BVDSS 400V RDS(on) .
IRF350 - N-Channel Power MOSFET
(Fairchild Semiconductor)
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IRF351 - N-Channel MOSFET Transistor
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IRF351
DESCRIPTION ·VGS Rated at ±20V ·Silicon Gate for Fast Switch.
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