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MJ10021 - NPN Silicon Power Darlington Transistor

Datasheet Summary

Description

The MJ10012 is high voltage, high

current Darlington transistor in a TO3 type package designed for automotive ignition, switching regulation and motor control applications.

Features

  • D Collector.
  • Emitter Sustaining Voltage: VCEO(sus) = 400Vdc (Min) D 175 Watts Capability at 50 Volts Absolute Maximum Ratings: Collector.
  • Emitter Voltage, VCEO.
  • . . . 400V Collector.
  • Emitter Voltage (RBE = 273 ), VCER.
  • . 550V Collector.
  • Base Voltage, VCBO.

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Datasheet Details

Part number MJ10021
Manufacturer NTE
File Size 54.93 KB
Description NPN Silicon Power Darlington Transistor
Datasheet download datasheet MJ10021 Datasheet
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Full PDF Text Transcription

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MJ10012 NPN Silicon Power Darlington Transistor TO3 Type Package Description: The MJ10012 is high−voltage, high−current Darlington transistor in a TO3 type package designed for automotive ignition, switching regulation and motor control applications. Features: D Collector−Emitter Sustaining Voltage: VCEO(sus) = 400Vdc (Min) D 175 Watts Capability at 50 Volts Absolute Maximum Ratings: Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V Collector−Emitter Voltage (RBE = 273 ), VCER . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 550V Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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