NTE102 - Germanium Complementary Transistors

Product Overview

NTE

Part number	NTE102
Manufacturer	NTE
File Size	24.54 KB
Description	Germanium Complementary Transistors
Datasheet	NTE102 Datasheet
Additional preview pages of the NTE102 datasheet.

The NTE102 (PNP) and NTE103 (NPN) are Germanium complementary transistors designed for medium speed saturated switching applications.

D Low Collector.
Emitter Saturation Voltage: VCE(sat) = 200mV Max @ IC = 24mA D High Emitter.
Base Breakdown Voltage: V(BR)EBO = 12V Min @ IE = 20µA Absolute Maximum Ratings: Collector.
Base Voltage, VCBO.
25V Collector.
Emitter Voltage, VCES.
. . . . 24V Emitter.
Base Voltage.

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Published: May 9, 2005 |