NTE102 Datasheet, Transistors, NTE

✔ NTE102 Features

D Low Collector
Emitter Saturation Voltage: VCE(sat) = 200mV Max @ IC = 24mA D High Emitter
Base Breakdown Voltage: V(BR)EBO = 12V Min @ IE = 20µA Absolute Maximum Ratin

✔ NTE102 Application

Features: D Low Collector
Emitter Saturation Voltage: VCE(sat) = 200mV Max @ IC = 24mA D High Emitter
Base

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NTE102

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NTE

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📄 Datasheet

Description:

Germanium complementary transistors. The NTE102 (PNP) and NTE103 (NPN) are Germanium complementary transistors designed for medium*speed saturated switching applications

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Integrated Circuit 3.5 Watt Audio Power Amp 10-lead DIP Vcc=18V

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NTE1029

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NTE102 Germanium Complementary Transistors NTE