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NTE102 Germanium Complementary Transistors

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Description

NTE102 (PNP) & NTE103 (NPN) Germanium Complementary Transistors Power Output, Driver .
The NTE102 (PNP) and NTE103 (NPN) are Germanium complementary transistors designed for medium. speed saturated switching applications.

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Datasheet Specifications

Part number
NTE102
Manufacturer
NTE
File Size
24.54 KB
Datasheet
NTE102_NTEElectronics.pdf
Description
Germanium Complementary Transistors

Features

* D Low Collector
* Emitter Saturation Voltage: VCE(sat) = 200mV Max @ IC = 24mA D High Emitter
* Base Breakdown Voltage: V(BR)EBO = 12V Min @ IE = 20µA Absolute Maximum Ratings: Collector
* Base Voltage, VCBO

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