NTE103 Datasheet, Transistors, NTE

✔ NTE103 Features

D Low Collector
Emitter Saturation Voltage: VCE(sat) = 200mV Max @ IC = 24mA D High Emitter
Base Breakdown Voltage: V(BR)EBO = 12V Min @ IE = 20µA Absolute Maximum Rati

✔ NTE103 Application

Features: D Low Collector
Emitter Saturation Voltage: VCE(sat) = 200mV Max @ IC = 24mA D High Emitter
Base

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NTE103

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NTE

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📄 Datasheet

Description:

Germanium complementary transistors. The NTE102 (PNP) and NTE103 (NPN) are Germanium complementary transistors designed for medium*speed saturated switching applications

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NTE103 Germanium Complementary Transistors NTE