NTE103
Description
: The NTE102 (PNP) and NTE103 (NPN) are Germanium plementary transistors designed for medium- speed saturated switching applications.
Features
:
D Low Collector- Emitter Saturation Voltage: VCE(sat) = 200m V Max @ IC = 24m A
D High Emitter- Base Breakdown Voltage: V(BR)EBO = 12V Min @ IE = 20µA
Absolute Maximum Ratings:
Collector- Base Voltage, VCBO
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- 25V Collector- Emitter Voltage, VCES
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- - . . . . 24V Emitter- Base Voltage, VEBO
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- . . 12V Continuous Collector Current, IC
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- - 150m A Emitter Current, IE
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