NTE103, NTE102 - Germanium Complementary Transistors

NTE

Datasheet Details

Part number	NTE103, NTE102
Manufacturer	NTE
File Size	24.54 KB
Description	Germanium Complementary Transistors
Datasheet	NTE102_NTEElectronics.pdf
Note	This datasheet PDF includes multiple part numbers: NTE103, NTE102. Please refer to the document for exact specifications by model.

The NTE102 (PNP) and NTE103 (NPN) are Germanium complementary transistors designed for medium speed saturated switching applications.

D Low Collector.
Emitter Saturation Voltage: VCE(sat) = 200mV Max @ IC = 24mA D High Emitter.
Base Breakdown Voltage: V(BR)EBO = 12V Min @ IE = 20µA Absolute Maximum Ratings: Collector.
Base Voltage, VCBO.
25V Collector.
Emitter Voltage, VCES.
. . . . 24V Emitter.
Base Voltag.

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Published: Aug 18, 2016 |