Part number:
NTE1102
Manufacturer:
NTE
File Size:
22.00 KB
Description:
Integrated circuit 3 stage audio amplifier.
* D Recommended for Driver of Push
* Pull Output Stage D Possible to Drive 4 Watt Output Stage D Wide Range of Supply Voltage Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Supply Voltage, VCC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE1102
NTE
22.00 KB
Integrated circuit 3 stage audio amplifier.
📁 Related Datasheet
NTE1100 - Integrated Circuit TV Sound IF Amp / FM IF Amp
(NTE)
NTE1100 Integrated Circuit TV Sound IF Amp, FM IF Amp
Features: D High Power Gain: GP = 69dB (Typ) D Good Limiter Characteristic: VIN (lim) = 600µV (T.
NTE1101 - Integrated Circuit General Purpose Amp
(NTE)
NTE1101 Integrated Circuit General Purpose Amp, Mixer, and Oscillator
Features: D General Amplifier Circuit D High Frequency Amplifier D Mixer, OSC an.
NTE1103 - Integrated Circuit General Purpose / Low Noise Preamplifier
(NTE)
NTE1103 Integrated Circuit General Purpose, Low Noise Preamplifier
Features: D Low Noise D Wide Operating Supply Voltage Range: VCC = 3V to 12V Absolu.
NTE1104 - FM/IF Limiter
(NTE)
NTE1104 Integrated Circuit Wide and Narrow Band Amp, FM/IF Limiter
Applications: D For FM IF Amplifier D For TV SIF Amplifier Absolute Maximum Ratings.
NTE110A - Germanium Diode
(NTE)
NTE110A Germanium Diode General Purpose
Features: D Low Forward Voltage Drop D Low Power Consumption D Very Low Noise Level Absolute Maximum Ratings: .
NTE110MP - Germanium Diode
(NTE)
NTE110MP Germanium Diode Point Contact Diode (Matched Pair)
Description: The NTE110MP is a matched pair (2) of germanium diodes designed for use in de.
NTE11 - Silicon Complementary Transistors
(NTE)
NTE11 (NPN) & NTE12 (PNP) Silicon Complementary Transistors High Current Amplifier
Description: The NTE11 (NPN) and NTE12 (PNP) are silicon plement.
NTE1112 - Integrated Circuit Audio Power Amplifier
(NTE)
..
NTE1112 Integrated Circuit Audio Power Amplifier, 4W @ 24V
Description: The NTE1112 is an integrated monolithic circuit in a 14−l.
