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NTE2076 Integrated Circuit 7-Segment Darlington Transistor

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Description

NTE2076 Integrated Circuit 7 *Segment Darlington Transistor Array w/Clamp Diode .
The NTE2076 is constructed with a 7. circuit Darlington Transistor Array by a NPN Transistor and is a semi. conductor integrated circui.

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Datasheet Specifications

Part number
NTE2076
Manufacturer
NTE
File Size
18.84 KB
Datasheet
NTE2076_NTEElectronics.pdf
Description
Integrated Circuit 7-Segment Darlington Transistor

Features

* D High Electric Voltage Endurance (BVCEO ≥ 40V) D Large Electric Current Drive (IC (max) = 150mA) D Convenient for Practical Attachment D Available to Drive with PMOS IC Output D Clamp Diode Attached D Wide Input Voltage Range (
* 40V to +40V) D Wide Operating Temperature Range (TA =

Applications

* Attachment relay or printer drive, digit drive of LED and lamps indicator device, interface of MOS bipolar
* logic IC, etc. Absolute Maximum Ratings: (TA =
* 20° to +75°C unless otherwise specified) Voltage Between Collector and Emitter when Output is “High”, VCEO
* . .

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