NTE2102 - Integrated Circuit NMOS / 1K Static RAM

NTE

NTE2102 Datasheet Preview — Preview of NTE2102 PDF

Datasheet Details

Part number	NTE2102
Manufacturer	NTE
File Size	28.73 KB
Description	Integrated Circuit NMOS / 1K Static RAM
Datasheet	NTE2102_NTEElectronics.pdf

NTE2102 Product details

Description

The NTE2101 is a high speed 1024 x 1 bit static random access read/write memory in a 16 Lead DIP type package designed using N Channel depletion mode silicon gate technology. Channel technology allows complete DTL/TTL compatibility of all inputs and outputs as well as a single 5V supply.

Features

D Single 5V Supply D All Inputs and Outputs Directly DTL/TTL Compatible D Static Operation.
No Clocks or Refresh D All Inputs Protected Against Static Charge D 350ns Access Time Absolute Maximum Ratings: (Note 1) Voltage at Any Pin.
. . . . 0.5V to +7V Power Dissipation, PD.
. . 1W St.

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Published: May 9, 2005 |