NTE2102
NTE
28.73kb
Integrated circuit nmos / 1k static ram. The NTE2101 is a high –speed 1024 x 1 bit static random access read/write memory in a 16 –Lead DIP typ
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NTE210 - Silicon Complementary Transistors
(NTE)
NTE210 (NPN) & NTE211 (PNP) Silicon Complementary Transistors General Purpose Output & Driver
Description: The NTE210 (NPN) and NTE211 (PNP) are silic.
NTE21 - Silicon Complementary Transistors
(NTE)
NTE20 (NPN) & NTE21 (PNP) Silicon Complementary Transistors High Power, Low Collector Saturation Voltage
Power Output
Features: D High Power in a Com.
NTE211 - Silicon Complementary Transistors
(NTE)
NTE210 (NPN) & NTE211 (PNP) Silicon Complementary Transistors
General Purpose Output & Driver
Description:
The NTE210 (NPN) and NTE211 (PNP) are sili.
NTE21128 - Integrated Circuit NMOS / 128K (16K x 8) UV EPROM
(NTE)
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NTE2114 - Integrated Circuit MOS / Static 4K RAM
(NTE)
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NTE21256 - 262 /144-Bit Dynamic Random Access Memory (DRAM)
(NTE)
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NTE213 - Germanium PNP Transistor
(NTE)
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NTE214 - Silicon NPN Transistor
(NTE)
NTE214 Silicon NPN Transistor
Darlington Driver
Description: The NTE214 is a silicon NPN Darlington transistor in a TO3P type package. Typical applic.
NTE214 - (NTE74xx) Transistor Logic
(NTE Electronics)
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NTE2147 - 4K Static Random Access Memory
(NTE)
NTE2147 Integrated Circuit 4K Static Random Access Memory (SRAM)
Description: The NTE2147 is a 4096−bit static Random Access Memory (SRAM) in an 18−Le.