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NTE2102 Datasheet - NTE

NTE2102 Integrated Circuit NMOS / 1K Static RAM

The NTE2101 is a high *speed 1024 x 1 bit static random access read/write memory in a 16 *Lead DIP type package designed using N *Channel depletion mode silicon gate technology. Static storage cells eliminate the need for clock or refresh circuitry. Low threshold silicon gate N.

NTE2102_NTEElectronics.pdf

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Datasheet Details

Part number:

NTE2102

Manufacturer:

NTE

File Size:

28.73 KB

Description:

Integrated circuit nmos / 1k static ram.

NTE2102 Distributor

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NTE2102 NTE2102 Integrated Circuit NMOS Static RAM NTE