NTE2102 Integrated Circuit NMOS / 1K Static RAM

NTE

Description

NTE2102 Integrated Circuit NMOS, 1K Static RAM (SRAM), 350ns .
The NTE2101 is a high. speed 1024 x 1 bit static random access read/write memory in a 16. Lead DIP type package designed using N.

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Datasheet Specifications

Part number: NTE2102
Manufacturer: NTE
File Size: 28.73 KB
Datasheet: NTE2102_NTEElectronics.pdf
Description: Integrated Circuit NMOS / 1K Static RAM

Features

* D Single 5V Supply D All Inputs and Outputs Directly DTL/TTL Compatible D Static Operation
* No Clocks or Refresh D All Inputs Protected Against Static Charge D 350ns Access Time Absolute Maximum Ratings: (Note 1) Voltage at Any Pin

NTE2102 Distributors

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NTE2102 Integrated Circuit NMOS Static RAM NTE

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