NTE21, NTE
NTE20 (NPN) & NTE21 (PNP) Silicon Complementary Transistors High Power, Low Collector Saturation Voltage
Power Output
Features: D High Power in a Com.
NTE2102, NTE
NTE2102 Integrated Circuit NMOS, 1K Static RAM (SRAM), 350ns
Description: The NTE2101 is a high–speed 1024 x 1 bit static random access read/write mem.
