NTE221 - MOSFET

NTE

Datasheet Details

The NTE221 is an N channel depletion type, dual insulated gate, field effect transistor that utilizes MOS construction. amplifier applications.

D Extremely Low Feedback Capacitance D High Power Gain Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Drain.
to.
Source Voltage, VDS.
0 to +20V Gate 1.
to.
Source Voltage, VG1S Continuous (DC).
. . . . +1V to.
8V Peak AC.

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Published: May 9, 2005 |