NTE2306 Datasheet, Transistors, NTE

NTE2306 Features

• Transistors D High Collector
    –Emitter Sustaining Voltage: VCEO(sus) = 160V D High DC Current Gain: hFE = 35 Typ @ IC = 8A D Low Collector
    –Emitter Saturation Voltage:

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NTE2306

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NTE

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📄 Datasheet

Description:

Silicon complementary transistors. The NTE2305 (NPN) and NTE2306 (PNP) are silicon complementary transistors in a TO218 type package designed for use in high power aud

NTE2306 Application

• Applications and high voltage switching regulator circuits. Features: D High Collector
    –Emitter Sustaining Voltage: VCEO(sus) = 160V

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