NTE2319 - Silicon NPN Transistor

NTE

NTE2319 Datasheet Preview — Preview of NTE2319 PDF

Datasheet Details

Part number	NTE2319
Manufacturer	NTE
File Size	26.40 KB
Description	Silicon NPN Transistor
Datasheet	NTE2319_NTEElectronics.pdf

NTE2319 Product details

Description

The NTE2319 is a silicon NPN transistor in a TO3 type package designed for high voltage, high speed, power switching in inductive circuits where fall time is critical. operated switchmode applications.

Features

D Fast Turn.
On Times @ TC = +100°C: Inductive Fall Time: 50ns Typ Inductive Crossover Time: 90ns Typ Inductive Storage Time: 800ns Typ D 100°C Performance Specified for: Reverse.
Biased SOA with Inductive Loads Switching Times with Inductive Loads Saturation Voltages Leakage Current.

📁 NTE2319 Similar Datasheet

NTE2393 - N-Channel MOSFET (INCHANGE)
NTE2000 - (NTExxxx) Linear Integrated Circuits (NTE Electronics)
NTE2001 - (NTExxxx) Linear Integrated Circuits (NTE Electronics)
NTE2003 - (NTExxxx) Linear Integrated Circuits (NTE Electronics)
NTE2004 - (NTExxxx) Linear Integrated Circuits (NTE Electronics)
NTE214 - (NTE74xx) Transistor Logic (NTE Electronics)
NTE2661 - Silicon NPN Transistor Horizontal Deflection Output (NTE Electronics)
NTE2662 - Silicon NPN Transistor High Frequency (NTE Electronics)

Other Datasheets by NTE

NTE231 - Silicon Controlled Rectifier
NTE2310 - Silicon NPN Transistor
NTE2311 - Silicon NPN Transistor
NTE2312 - Silicon NPN Transistor
NTE2313 - Silicon NPN Transistor
NTE2314 - Silicon PNP Transistor

Published: May 9, 2005 |