NTE2345 Datasheet, Transistors, NTE

✔ NTE2345 Features

D High DC Current Gain: hFE = 750 (Min) @ IC = 3A, VCE = 3V D Junction Temperature to +150°C Absolute Maximum Ratings: Collector
Emitter Voltage, VCEO . . . . . . . . .

✔ NTE2345 Application

. Features: D High DC Current Gain: hFE = 750 (Min) @ IC = 3A, VCE = 3V D Junction Temperature to +150°C Abs

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NTE2345

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NTE

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📄 Datasheet

Description:

Silicon complementary transistors. The NTE2345 (NPN) and NTE2346 (PNP) are silicon complementary Darlington transistors in an SOT*82 type package designed for use in a