NTE2349 - Silicon Darlington Transistors

NTE

NTE2349 Datasheet Preview — Preview of NTE2349 PDF

Datasheet Details

Part number	NTE2349
Manufacturer	NTE
File Size	26.78 KB
Description	Silicon Darlington Transistors
Datasheet	NTE2349_NTEElectronics.pdf

NTE2349 Product details

Description

The NTE2349 (NPN) and NTE2350 (PNP) are silicon complementary Darlington transistors in a TO3 type package designed for use as output devices in general purpose amplifier applications.

Features

D High DC Current Gain: hFE = 1000 (Min) @ IC = 25A hFE = 400 (Min) @ IC = 50A D Diode Protection to Rated IC D Monolithic Construction w/Built.
In Base.
Emitter Shunt Resistor D Junction Temperature to +200°C Absolute Maximum Ratings: Collector.
Emitter Voltage, VCEO.
. . . 120V Collector.
Base Voltage, VCB.

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Published: May 9, 2005 |