NTE2380 Complementary Silicon Gate MOSFET

NTE

Description

NTE2380 (N *Ch) & NTE2381 (P *Ch) Complementary Silicon Gate MOSFETs Enhancement Mode, High Speed Switch .
The NTE2380 (N. Ch) and NTE2381 (P. Ch) are complementary TMOS power FETs in a TO220 type package designed for high voltage, high speed.

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Datasheet Specifications

Part number: NTE2380
Manufacturer: NTE
File Size: 29.59 KB
Datasheet: NTE2380_NTEElectronics.pdf
Description: Complementary Silicon Gate MOSFET

Features

* D Silicon Gate for Fast Switching Speeds D Rugged
* SOA is Power Dissipation Limited D Source
* to
* Drain Diode Characterized for Use With Inductive Loads Absolute Maximim Ratings: Drain
* Source Voltage, VDSS

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NTE2380 Complementary Silicon Gate MOSFET NTE

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