NTE2380 - Complementary Silicon Gate MOSFET

NTE

NTE2380 Datasheet Preview — Preview of NTE2380 PDF

Datasheet Details

Part number	NTE2380
Manufacturer	NTE
File Size	29.59 KB
Description	Complementary Silicon Gate MOSFET
Datasheet	NTE2380_NTEElectronics.pdf

NTE2380 Product details

Description

The NTE2380 (N Ch) and NTE2381 (P Ch) are complementary TMOS power FETs in a TO220 type package designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid, and relay drivers.

Features

D Silicon Gate for Fast Switching Speeds D Rugged.
SOA is Power Dissipation Limited D Source.
to.
Drain Diode Characterized for Use With Inductive Loads Absolute Maximim Ratings: Drain.
Source Voltage, VDSS.
. 500V Drain.
Gate Voltage (RGS = 1MΩ), VDGR.
500V Gate.
Source Volta.

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Other Datasheets by NTE

NTE238 - Silicon NPN Transistor
NTE2381 - Complementary Silicon Gate MOSFETs
NTE2382 - N-CHANNEL MOSFET
NTE2383 - P-CHANNEL MOSFET
NTE2384 - N-CHANNEL MOSFET
NTE2385 - N-CHANNEL MOSFET

Published: May 9, 2005 |