NTE249 - Silicon Complementary Transistors

NTE

NTE249 Datasheet Preview — Preview of NTE249 PDF

Datasheet Details

Part number	NTE249
Manufacturer	NTE
File Size	25.18 KB
Description	Silicon Complementary Transistors
Datasheet	NTE249_NTEElectronics.pdf

NTE249 Product details

Description

The NTE249 (NPN) and NTE250 (PNP) are silicon complementary Darlington transistors in a TO3 type case designed for use as output devices in complementary general purpose amplifier applications.

Features

D High DC Current Gain: hFE = 3500 Typ @ IC = 10A D Monolithic Construction with Built.
In Base.
Emitter Shunt Resistors Absolute Maximum Ratings: Collector.
Emitter Voltage, VCEO.
. . . 100V Collector.
Base Voltage, VCB.
. 100V Emitter.
Base Voltage, VEB.

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Other Datasheets by NTE

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NTE2402 - Silicon Complementary Transistors
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Published: May 9, 2005 |