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NTE252 Datasheet - NTE

NTE252 Silicon Complementary Transistors

NTE252 Features

* D High DC Current Gain @ IC = 10A: hFE = 2400 Typ (NTE251) hFE = 4000 Typ (NTE252) D Collector

* Emitter Sustaining Voltage: VCEO(sus) = 100V Min D Monolithic Construction with Built

* In Base

* Emitter Shunt Resistors Absolute Maximum Ratings: (TA = +25°C unless otherwise specifi

Datasheet Details

NTE252

NTE

26.19 KB

Silicon complementary transistors.

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NTE252 Silicon Complementary Transistors NTE

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