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NTE2530 Silicon Complementary Transistors

NTE2530 Description

NTE2530 (NPN) & NTE2531 (PNP) Silicon Complementary Transistors High Voltage Driver .

NTE2530 Features

* D High Current Capacity: IC = 2A D High Breakdown Voltage: VCEO = 400V Min Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector Base Voltage, VCBO
* 400V Collector Emitter Voltage

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Datasheet Details

Part number
NTE2530
Manufacturer
NTE
File Size
23.25 KB
Datasheet
NTE2530_NTEElectronics.pdf
Description
Silicon Complementary Transistors

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Silicon Complementary Transistors NTE
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