NTE2530 - Silicon Complementary Transistors

Datasheet Details

Part number	NTE2530
Manufacturer	NTE
File Size	23.25 KB
Description	Silicon Complementary Transistors
Datasheet	NTE2530_NTEElectronics.pdf

D High Current Capacity: IC = 2A D High Breakdown Voltage: VCEO = 400V Min Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector Base Voltage, VCBO.
400V Collector Emitter Voltage, VCEO.
. . . 400V Emitter Base Voltage, VEBO.

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Published: May 9, 2005 |