NTE2540 - Silicon NPN Transistor

Datasheet Details

D High DC Current Gain: hFE = 600 Min (VCE = 2V, IC = 2A) D Monolithic Construction w/Built.
In Base.
Emitter Shunt Resistor Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector Base Voltage, VCBO.
600V Collector Emitter Voltage, VCEO.
. . . 400V Emitter Base Voltage, VEBO.

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Published: May 9, 2005 |