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NTE268 - Silicon Complementary Transistors Darlington Power Amplifier

Description

The NTE268 (NPN) and NTE269 (PNP) are silicon complementary Darlington transistors in a TO202 type package designed for amplifier and driver applications where high gain is an essential requirement, low power lamp and relay drivers and power drivers for high current applications such as vol

Features

  • D Low Collector.
  • Emitter Saturation Voltage: VCE(sat) = 1.5V Max @ IC = 1.5A D TO202 Type Package: 2W Free Air Dissipation @ TA = +25°C Absolute Maximum Ratings: Collector.
  • Emitter Voltage, VCEO.
  • . . . . 50V Collector.
  • Emitter Voltage, VCES.
  • . . . . 50V Emitter.
  • Base Voltage, VEBO.

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Datasheet preview – NTE268

Datasheet Details

Part number NTE268
Manufacturer NTE
File Size 21.30 KB
Description Silicon Complementary Transistors Darlington Power Amplifier
Datasheet download datasheet NTE268 Datasheet
Additional preview pages of the NTE268 datasheet.

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Full PDF Text Transcription

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NTE268 (NPN) & NTE269 (PNP) Silicon Complementary Transistors Darlington Power Amplifier Description: The NTE268 (NPN) and NTE269 (PNP) are silicon complementary Darlington transistors in a TO202 type package designed for amplifier and driver applications where high gain is an essential requirement, low power lamp and relay drivers and power drivers for high–current applications such as voltage regulators. Features: D Low Collector–Emitter Saturation Voltage: VCE(sat) = 1.5V Max @ IC = 1.5A D TO202 Type Package: 2W Free Air Dissipation @ TA = +25°C Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V Collector–Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . .
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