Description
The NTE3085 consists of a gallium arsenide infrared emitting diode coupled to a symmetrical silicon photo detector.
free control of low AC and DC analog signals.
Features
- As A Remote Variable Resistor D ≤ 100Ω to ≥ 300MΩ D ≥ 99.9% Linearity D ≤ 15pF Shunt Capacitance D ≥ 100GΩ I/O Isolation Resistance
As An Analog Signal Switch D Extremely Low Offset Voltage D 60VP.
- P Signal Capability D No Charge Injection or Latchup D ton, toff ≤ 15µs
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Infrared Emitting Diode Power Dissipation (TA = +25°C), PD.
- . 150mW Derate.
NTE3085_NTEElectronics.pdf
