Part number:
NTE330
Manufacturer:
NTE
File Size:
21.58 KB
Description:
Germanium pnp transistor.
NTE330
NTE
21.58 KB
Germanium pnp transistor.
📁 Related Datasheet
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NTE3300 Insulated Gate Bipolar Transistor N–Channel Enhancement Mode, High Speed Switch
Features: D High Input Impedance D Low Saturation Voltage D En.
NTE3301 - Insulated Gate Bipolar Transistor
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NTE3301 Insulated Gate Bipolar Transistor N–Channel Enhancement Mode, High Speed Switch
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NTE331 - Silicon Complementary Transistors
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NTE331 (NPN) & NTE332 (PNP) Silicon Complementary Transistors Audio Power Amp, Switch
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Features: D High Input Impedance D High Speed D Low Saturation.
NTE3311 - Insulated Gate Bipolar Transistor
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NTE3311 Insulated Gate Bipolar Transistor N–Channel Enhancement Mode, High Speed Switch
Features: D High Input Impedance D High Speed D Low Saturation.
NTE3312 - Insulated Gate Bipolar Transistor
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NTE3312 Insulated Gate Bipolar Transistor N–Channel Enhancement Mode, High Speed Switch
Features: D High Input Impedance D High Speed D Low Saturation.
