Part number:
NTE331
Manufacturer:
NTE
File Size:
21.42 KB
Description:
Silicon complementary transistors.
NTE331
NTE
21.42 KB
Silicon complementary transistors.
📁 Related Datasheet
NTE330 - Germanium PNP Transistor
(NTE)
NTE330 Germanium PNP Transistor High Power Switch
Description: The NTE330 is a germanium PNP power transistor in a TO36 type package featuring low sat.
NTE3300 - Insulated Gate Bipolar Transistor
(NTE)
NTE3300 Insulated Gate Bipolar Transistor N–Channel Enhancement Mode, High Speed Switch
Features: D High Input Impedance D Low Saturation Voltage D En.
NTE3301 - Insulated Gate Bipolar Transistor
(NTE)
NTE3301 Insulated Gate Bipolar Transistor N–Channel Enhancement Mode, High Speed Switch
Features: D High Input Impedance D Low Saturation Voltage D En.
NTE3302 - Insulated Gate Bipolar Transistor
(NTE)
NTE3302 Insulated Gate Bipolar Transistor N–Channel Enhancement Mode, High Speed Switch
Features: D High Input Impedance D High Speed D Low Saturation.
NTE3303 - Insulated Gate Bipolar Transistor
(NTE)
NTE3303 Insulated Gate Bipolar Transistor N–Channel Enhancement Mode, High Speed Switch
Features: D High Input Impedance D High Speed D Low Saturation.
NTE3310 - Insulated Gate Bipolar Transistor
(NTE)
NTE3310 Insulated Gate Bipolar Transistor N–Channel Enhancement Mode, High Speed Switch
Features: D High Input Impedance D High Speed D Low Saturation.
NTE3311 - Insulated Gate Bipolar Transistor
(NTE)
NTE3311 Insulated Gate Bipolar Transistor N–Channel Enhancement Mode, High Speed Switch
Features: D High Input Impedance D High Speed D Low Saturation.
NTE3312 - Insulated Gate Bipolar Transistor
(NTE)
NTE3312 Insulated Gate Bipolar Transistor N–Channel Enhancement Mode, High Speed Switch
Features: D High Input Impedance D High Speed D Low Saturation.
