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NTE3311 Insulated Gate Bipolar Transistor

NTE3311 Description

NTE3311 Insulated Gate Bipolar Transistor N *Channel Enhancement Mode, High Speed Switch .

NTE3311 Applications

* D High Power Switching D Motor Control Absolute Maximum Raings: (TA = +25°C unless otherwise specified) Collector
* Emitter Voltage, VCES
* . . . 600V Gate
* Emitter Voltage, VGES

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Datasheet Details

Part number
NTE3311
Manufacturer
NTE
File Size
18.85 KB
Datasheet
NTE3311_NTEElectronics.pdf
Description
Insulated Gate Bipolar Transistor

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Insulated Gate Bipolar Transistor NTE
NTE NTE3311-like datasheet