NTE3312 Insulated Gate Bipolar Transistor

NTE

Description

NTE3312 Insulated Gate Bipolar Transistor N *Channel Enhancement Mode, High Speed Switch .

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Datasheet Specifications

Part number: NTE3312
Manufacturer: NTE
File Size: 18.85 KB
Datasheet: NTE3312_NTEElectronics.pdf
Description: Insulated Gate Bipolar Transistor

Applications

* D High Power Switching D Motor Control Absolute Maximum Raings: (TA = +25°C unless otherwise specified) Collector
* Emitter Voltage, VCES
* . . 1200V Gate
* Emitter Voltage, VGES

NTE3312 Distributors

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NTE3312 Insulated Gate Bipolar Transistor NTE

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