Datasheet4U Logo Datasheet4U.com

NTE3300

Insulated Gate Bipolar Transistor

NTE3300 Features

* D High Input Impedance D Low Saturation Voltage D Enhancement Mode D 20V Gate Drive Applications: D High Power Switching D Motor Control Absolute Maximum Raings: (TA = +25°C unless otherwise specified) Collector

* Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

NTE3300 Datasheet (19.63 KB)

Preview of NTE3300 PDF

Datasheet Details

Part number:

NTE3300

Manufacturer:

NTE

File Size:

19.63 KB

Description:

Insulated gate bipolar transistor.

📁 Related Datasheet

NTE330 - Germanium PNP Transistor (NTE)
NTE330 Germanium PNP Transistor High Power Switch Description: The NTE330 is a germanium PNP power transistor in a TO36 type package featuring low sat.

NTE3301 - Insulated Gate Bipolar Transistor (NTE)
NTE3301 Insulated Gate Bipolar Transistor N–Channel Enhancement Mode, High Speed Switch Features: D High Input Impedance D Low Saturation Voltage D En.

NTE3302 - Insulated Gate Bipolar Transistor (NTE)
NTE3302 Insulated Gate Bipolar Transistor N–Channel Enhancement Mode, High Speed Switch Features: D High Input Impedance D High Speed D Low Saturation.

NTE3303 - Insulated Gate Bipolar Transistor (NTE)
NTE3303 Insulated Gate Bipolar Transistor N–Channel Enhancement Mode, High Speed Switch Features: D High Input Impedance D High Speed D Low Saturation.

NTE331 - Silicon Complementary Transistors (NTE)
NTE331 (NPN) & NTE332 (PNP) Silicon Complementary Transistors Audio Power Amp, Switch Description: The NTE331 (NPN) and NTE332 (PNP) are silicon epita.

NTE3310 - Insulated Gate Bipolar Transistor (NTE)
NTE3310 Insulated Gate Bipolar Transistor N–Channel Enhancement Mode, High Speed Switch Features: D High Input Impedance D High Speed D Low Saturation.

NTE3311 - Insulated Gate Bipolar Transistor (NTE)
NTE3311 Insulated Gate Bipolar Transistor N–Channel Enhancement Mode, High Speed Switch Features: D High Input Impedance D High Speed D Low Saturation.

NTE3312 - Insulated Gate Bipolar Transistor (NTE)
NTE3312 Insulated Gate Bipolar Transistor N–Channel Enhancement Mode, High Speed Switch Features: D High Input Impedance D High Speed D Low Saturation.

TAGS

NTE3300 Insulated Gate Bipolar Transistor NTE

Image Gallery

NTE3300 Datasheet Preview Page 2

NTE3300 Distributor