NTE338 Datasheet - NTE

NTE338 Silicon NPN Transistor

NTE338 Features

* D Specified 12.5V, 30MHz Characteristics: Output Power = 20W (PEP) Minimum Gain = 12dB Efficiency = 45% D Intermodulation Distortion @ 20W (PEP): IMD =

* 30dB Min D 100% Tested for Load Mismatched at all Phase Angle with 30:1 VSWR Absolute Maximum Ratings: Collector

* Emitter Voltage,

NTE338 Datasheet (23.06 KB)

NTE338 Datasheet Preview — Preview of NTE338 PDF

Datasheet Details

Part number:

NTE338

Manufacturer:

NTE

File Size:

23.06 KB

Description:

Silicon npn transistor.

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NTE338 Silicon NPN Transistor NTE

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