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NTE50 - Silicon Complementary Transistors

This page provides the datasheet information for the NTE50, a member of the NTE49 Silicon Complementary Transistors family.

Datasheet Summary

Description

The NTE49 (NPN) and NTE50 (PNP) are silicon complementary transistors in a TO202 type case designed for general purpose, high voltage amplifier and driver applications.

Features

  • D High Collector Breakdown Voltage: V(BR)CEO = 100V Min @ IC = 1mA D High Power Dissipation: PD = 10W @ TC = +25°C Absolute Maximum Ratings: Collector.
  • Emitter Voltage, VCEO.
  • . . . 100V Collector.
  • Base Voltage, VCB.
  • . 120V Emitter.
  • Base Voltage, VEB.

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Datasheet preview – NTE50

Datasheet Details

Part number NTE50
Manufacturer NTE
File Size 27.24 KB
Description Silicon Complementary Transistors
Datasheet download datasheet NTE50 Datasheet
Additional preview pages of the NTE50 datasheet.

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Full PDF Text Transcription

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NTE49 (NPN) & NTE50 (PNP) Silicon Complementary Transistors General Purpose, High Voltage Amp, Driver Description: The NTE49 (NPN) and NTE50 (PNP) are silicon complementary transistors in a TO202 type case designed for general purpose, high voltage amplifier and driver applications. Features: D High Collector Breakdown Voltage: V(BR)CEO = 100V Min @ IC = 1mA D High Power Dissipation: PD = 10W @ TC = +25°C Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Collector–Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V Emitter–Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . .
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