NTE50 Datasheet, transistors equivalent, NTE

NTE50 Features

• Transistors D High Collector Breakdown Voltage: V(BR)CEO = 100V Min @ IC = 1mA D High Power Dissipation: PD = 10W @ TC = +25°C Absolute Maximum Ratings: Collector
    –Emitter Voltage,

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Part number:

NTE50

Manufacturer:

NTE

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27.24kb

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📄 Datasheet

Description:

Silicon complementary transistors. The NTE49 (NPN) and NTE50 (PNP) are silicon complementary transistors in a TO202 type case designed for general purpose, high voltag

NTE50 Application

• Applications Features: D High Collector Breakdown Voltage: V(BR)CEO = 100V Min @ IC = 1mA D High Power Dissipation: PD = 10W @ TC = +25°C Absolute

TAGS

NTE50

NTE

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