Datasheet4U.com

TIP112 - Silicon NPN Transistor

NTE

📥 Download Datasheet

TIP112 Datasheet Preview — Preview of TIP112 PDF

datasheet Preview Page 2

Datasheet Details

Part number	TIP112
Manufacturer	NTE
File Size	55.18 KB
Description	Silicon NPN Transistor
Datasheet	TIP112-NTE.pdf

TIP112 Product details

Description

The TIP112 is a silicon NPN Darlington transistor in a TO 220 type package designed for general purpose amplifier and low speed switching applications.

Features

D High DC Current Gain: hFE = 2500 (Typ) at IC = 1A D Collector.
Emitter Sustaining Voltage: VCEO(sus) = 100V (Min) at IC = 30mA D Low Collector.
Emitter Saturation Voltage: VCE(sat) = 2.5V (Max) at IC = 2A Absolute Maximum Ratings: (Note 1) Collector.
Emitter Voltage, VCEO.
. . . 100V Collector.
Base Voltage, VCB.

📁 TIP112 Similar Datasheet

TIP110 - NPN Transistor (INCHANGE)
TIP110A - PNP Epitaxial Silicon Transistor (First Components International)
TIP111 - NPN Transistor (INCHANGE)
TIP115 - PNP Transistor (INCHANGE)
TIP116 - PNP Epitaxial Silicon Darlington Transistors (MCC)
TIP117 - EPITAXIAL PLANAR PNP TRANSISTOR (KEC)
TIP117F - EPITAXIAL PLANAR PNP TRANSISTOR (KEC)
TIP119 - Six Channel 16 bit Quadrature Decoder Counter (TEWS TECHNOLOGIES)

Other Datasheets by NTE

TIP100 - Silicon NPN Darlington Power Amp
TIP101 - Silicon NPN Darlington Power Amp
TIP102 - Silicon NPN Darlington Power Amp
TIP120 - Silicon NPN Transistor
TIP121 - Silicon NPN Transistor
TIP122 - Silicon NPN Transistor

Published: Jul 5, 2020 |