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TIP112

Silicon NPN Transistor

TIP112 Features

* D High DC Current Gain: hFE = 2500 (Typ) at IC = 1A D Collector

* Emitter Sustaining Voltage: VCEO(sus) = 100V (Min) at IC = 30mA D Low Collector

* Emitter Saturation Voltage: VCE(sat) = 2.5V (Max) at IC = 2A Absolute Maximum Ratings: (Note 1) Collector

* Emitter Voltage, VCEO . .

TIP112 Datasheet (55.18 KB)

Preview of TIP112 PDF

Datasheet Details

Part number:

TIP112

Manufacturer:

NTE

File Size:

55.18 KB

Description:

Silicon npn transistor.

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