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BUK626R2-40C N-channel TrenchMOS intermediate level FET

BUK626R2-40C Description

DP AK BUK626R2-40C N-channel TrenchMOS intermediate level FET Rev.1 * 12 July 2011 Product data sheet 1.Product profile 1.1 General descri.
Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology.

BUK626R2-40C Features

* AEC Q101 compliant
* Suitable for standard and logic level gate drive sources

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N-channel TrenchMOS intermediate level FET NXP Semiconductors
NXP Semiconductors BUK626R2-40C-like datasheet