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BUK626R2-40C N-channel TrenchMOS intermediate level FET

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Description

DP AK BUK626R2-40C N-channel TrenchMOS intermediate level FET Rev.1 * 12 July 2011 Product data sheet 1.Product profile 1.1 General descri.
Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology.

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Features

* AEC Q101 compliant
* Suitable for standard and logic level gate drive sources

BUK626R2-40C Distributors

📁 Related Datasheet

BUK6208-40C BUK6209-30C BUK6212-40C BUK624R5-30C BUK625R2-30C BUK637-400B

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