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BUK9E6R1-100E N-channel TrenchMOS logic level FET

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Description

BUK9E6R1-100E 11 September 2012 N-channel TrenchMOS logic level FET Product data sheet 1.Product profile 1.1 General .
Logic level N-channel MOSFET in a SOT226 package using TrenchMOS technology.

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Features

* AEC Q101 compliant
* Repetitive avalanche rated
* Suitable for thermally demanding environments due to 175 °C rating

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BUK9E6R1-100E N-channel TrenchMOS logic level FET NXP Semiconductors
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