PBHV9560Z 0.5 A PNP high-voltage low VCEsat (BISS) transistor

NXP Semiconductors

Description

SOT223 PBHV9560Z 600 V, 0.5 A PNP high-voltage low VCEsat (BISS) transistor 12 August 2014 Product data sheet 1.General .
PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic packa.

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Datasheet Specifications

Part number: PBHV9560Z
Manufacturer: NXP ↗ Semiconductors
File Size: 209.41 KB
Datasheet: PBHV9560Z-NXPSemiconductors.pdf
Description: 0.5 A PNP high-voltage low VCEsat (BISS) transistor

Features

* High voltage
* Low collector-emitter saturation voltage VCEsat
* High collector current capability IC
* High collector current gain hFE at high IC

Applications

* Electronic ballast for fluorescent lighting
* LED driver for LED chain module
* LCD backlighting
* HID front lighting
* Automotive motor management
* Hook switch for wired telecom
* Switch Mode Power Supply (SMPS) 4. Quick reference data Ta

PBHV9560Z Distributors

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PBHV9560Z 0.5 PNP high-voltage low VCEsat BISS transistor NXP Semiconductors

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